Co-doping with antimony to control phosphorous diffusion in germanium
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چکیده
منابع مشابه
High phosphorous doped germanium: Dopant diffusion and modeling
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 Â 10 19 cm À3 by the ph...
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Declaration This thesis is a presentation of my original research work. Wherever contributions of others are involved, every effort is made to indicate this clearly, with due reference to the literature, and acknowledgement of collaborative research and discussions.Abstract Currently, the International Technology Roadmap for Semiconductors (ITRS) is targeting the 22nm technology node in accorda...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2013
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4792480